Electrical and Photonics Characteristics of Hftiero Thin Films Deposited at 673 K Substrate Temperature

Abstract

Thin films of Ti and Er co-doped hafnium oxide (HfO2) are deposited at 673K substrate temperature on Si (100) wafers by means of RF sputtering technique. The X-ray diffraction (XRD) has been performed to study crystal structure and surface morphology. Photoluminescence (PL) spectroscopy has been used to observe the photonics properties and defect levels of the thin films. The C-V measurements have been conducted to investigate electrical properties of thin films. The capacitance value of HfTiErO gate dielectric is higher as compared to pure HfO2.